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Same model may have multiple batches, images only for reference.
IRFS33N15D Real Image
Same model may have multiple batches, images only for reference.

IRFS33N15D

Part No IRFS33N15D
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 33A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 56mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 90nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2020pF at 25V
Power Dissipation (Maximum) 3.8W, 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188001-IRFS33N15D
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS33N15D CAD Model

Description

The 1188001-IRFS33N15D is an N-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 33A.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 33A
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Power Dissipation: 3.8W
  • Maximum On-Resistance: 56mOhm @ 20A and 10V
  • Input Capacitance: 2020pF @ 25V
  • Gate Charge: 90nC @ 10V
  • Package: D2PAK

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