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Same model may have multiple batches, images only for reference.
IRFS52N15D Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFS52N15D

Part No IRFS52N15D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 51A D2PAK
Datasheet
IRFS52N15D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 60936-IRFS52N15D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS52N15D CAD Model

Description

The Infineon Technologies IRFS52N15D is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 150V and a Continuous Drain Current of 51A (Tc).

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 51A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 32 mOhm @ 36A, 10V
  • Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
  • Package: D2PAK
  • Technology: SMD (SMT)
  • Commonly Used: Yes
  • Popularity: High

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Quantity Unit Price Ext. Price
30+ $2.0340 $61.0200
70+ $1.6690 $116.8300
110+ $1.6170 $177.8700
150+ $1.5650 $234.7500
195+ $1.5131 $295.0545
260+ $1.3560 $352.5600
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