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Same model may have multiple batches, images only for reference.
IRFS5620TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS5620TRLPBF

Part No IRFS5620TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A D2PAK
Datasheet
IRFS5620TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 77.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047151-IRFS5620TRLPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRFS5620TRLPBF CAD Model

Description

The Infineon Technologies IRFS5620TRLPBF is a MOSFET technology N-channel polarity power transistor.

  • Channel Type: N-Channel
  • Mounting Technology: Surface Mount Technology
  • Power Dissipation (Max): 144W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 24A (Tc)
  • Rds On (Max) @ Id, 10V: 77.5 mOhm @ 15A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance (Max): 1710pF @ 50V
  • Package: D2PAK
  • Product Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2696 $59.0096
63+ $1.8619 $117.2997
97+ $1.8041 $174.9977
133+ $1.7464 $232.2712
172+ $1.6875 $290.2500
230+ $1.5131 $348.0130
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Availability: 2,100 pieces
MOQ: 26 pcs
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