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Same model may have multiple batches, images only for reference.
FDB12N50FTM_WS Real Image
Same model may have multiple batches, images only for reference.

FDB12N50FTM_WS

Part No FDB12N50FTM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11.5A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1395pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 165W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037961-FDB12N50FTM_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB12N50FTM_WS CAD Model

Description

The FDB12N50FTM_WS is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 11.5A (Tc)
  • Rds On (Max): 700 mOhm @ 6A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Power Dissipation (Max): 165W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: D2PAK (TO-263AB)
  • Mounting: SMD (SMT) Technology
  • Input Capacitance (Max): 1395pF @ 25V
  • Gate Charge (Max): 30nC @ 10V
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6447 $65.7880
90+ $1.3490 $121.4100
135+ $1.3075 $176.5125
185+ $1.2647 $233.9695
240+ $1.2231 $293.5440
320+ $1.0961 $350.7520
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