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Same model may have multiple batches, images only for reference.
IRFS7730TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS7730TRLPBF

Part No IRFS7730TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 195A D2PAK
Datasheet
IRFS7730TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 407nC @ 10V
Max Input Capacitance 13660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047172-IRFS7730TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS7730TRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 375W (Tc).

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Power Dissipation: 375W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 195A (Tc) @ 25°C
  • Package: D2PAK (TO-263AB)
  • Gate-Source Threshold Voltage: 3.7V @ 250μA
  • Maximum Gate Charge: 407nC @ 10V
  • Maximum Input Capacitance: 13660pF @ 25V
  • Maximum Rds On: 2.6 mOhm @ 100A, 10V

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Quantity Unit Price Ext. Price
8+ $6.3798 $51.0384
20+ $5.2347 $104.6940
30+ $5.0711 $152.1330
41+ $4.9075 $201.2075
53+ $4.7439 $251.4267
71+ $4.2532 $301.9772
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