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IRFS7762TRLPBF

Part No IRFS7762TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
Sample
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4440 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 300 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 875186-IRFS7762TRLPBF
Ultra Librarian 3D Model Ultra Librarian IRFS7762TRLPBF CAD Model

Description

The 875186-IRFS7762TRLPBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET® and StrongIRFET™
  • Drain to Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id) @ 25°C: 85A
  • On-Resistance (Rds On) @ 51A and 10V: 6.7mOhm
  • Gate Threshold Voltage (Vgs(th)) @ 100µA: 3.7V
  • Power Dissipation: 140W
  • Mounting: Surface Mountable
  • Package: TO-263-3, D²Pak
  • Gate Charge (Qg) @ 10V: 130nC
  • Input Capacitance (Ciss) @ 25V: 4440pF
  • Operating Temperature Range: -55°C to 175°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4584 $50.4240
270+ $0.3761 $101.5470
415+ $0.3644 $151.2260
570+ $0.3526 $200.9820
735+ $0.3409 $250.5615
985+ $0.3056 $301.0160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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