The Infineon Technologies MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 88A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 88A @ 25°C
• Power Dissipation: 200W (Tc)
• Maximum Rds On @ Id,Vgs: 10 mOhm @ 58A, 10V
• Gate-Source Threshold Voltage: 4V @ 150μA
• Maximum Gate Charge: 180nC @ 10V
• Package: TO-262
• Leads: Long Leads, I2Pak, TO-262AA
• Mounting: Through Hole
• Application: Discrete Semiconductor Products
• Temperature Range: -55°C to 175°C (TJ)