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Same model may have multiple batches, images only for reference.
IRFSL4410Z Real Image
Same model may have multiple batches, images only for reference.

IRFSL4410Z

Part No IRFSL4410Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 97A TO-262
Datasheet
IRFSL4410Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4820pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205403-IRFSL4410Z
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFSL4410Z CAD Model

Description

The Infineon Technologies IRFSL4410Z is a N-Channel MOSFET that offers a drain-source breakdown voltage of 100V and a continuous drain current of 97A at 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 97A @ 25°C
  • Maximum Rds On: 9 mOhm @ 58A, 10V
  • Package: TO-262
  • Applications: Power supplies, DC-DC converters, and motor control circuits
  • Maximum Power Dissipation: 230W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
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