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Same model may have multiple batches, images only for reference.
IRFSL4410ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL4410ZPBF

Part No IRFSL4410ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 97A TO-262 / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube
Datasheet
IRFSL4410ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4820pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 230W (Tc)
Rds On (Maximum) @ Id, Vgs 9 mOhm @ 58A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-262
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774791-IRFSL4410ZPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFSL4410Z
Introduction Date March 06, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFSL4410ZPBF CAD Model

Description

The Infineon Technologies IRFSL4410ZPBF is a medium popularity MOSFET transistor in the HEXFET series.

  • Maximum Voltage: 100V
  • Current @ 25°C: 97A
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting Type: Through Hole
  • Maximum Power Dissipation: 230W
  • Maximum Rds On: 9 mOhm @ 58A, 10V
  • Input Capacitance: 4820pF @ 50V
  • Gate Charge: 120nC @ 10V
  • Type: N-channel MOSFET

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31+ $3.2975 $102.2225
47+ $3.1944 $150.1368
65+ $3.0914 $200.9410
84+ $2.9883 $251.0172
112+ $2.6792 $300.0704
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