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Same model may have multiple batches, images only for reference.
IRFSL5620PBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL5620PBF

Part No IRFSL5620PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 24A TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 77.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040760-IRFSL5620PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFSL5620PBF CAD Model

Description

The Infineon Technologies 040760-IRFSL5620PBF is a MOSFET electronic component designed for use in various applications.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 24A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Rds On: 77.5 mOhm @ 15A, 10V
  • Package: TO-262
  • Mounting: Through-hole
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited
  • Quantity per Package: 50

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22+ $5.3303 $117.2666
34+ $5.1640 $175.5760
47+ $4.9965 $234.8355
60+ $4.8302 $289.8120
80+ $4.3313 $346.5040
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Availability: 4,000 pieces
MOQ: 9 pcs
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