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IRFU120Z

Part No IRFU120Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.7A I-PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040374-IRFU120Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU120Z CAD Model

Description

The Infineon Technologies IRFU120Z is a N-channel MOSFET transistor that is suitable for various applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 8.7A @ 25°C
  • Maximum Rds On (Id,Vgs): 190 mOhm @ 5.2A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 10nC @ 10V
  • Package: IPAK (TO-251)
  • Dimensions: TO-251-3 Short Leads, IPak, TO-251AA
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation (max): 35W (Tc)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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