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Same model may have multiple batches, images only for reference.
IRFU3518 Real Image
Same model may have multiple batches, images only for reference.

IRFU3518

Part No IRFU3518
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 38A IPAK
Datasheet
IRFU3518 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205408-IRFU3518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3518 CAD Model

Description

The Infineon Technologies 205408-IRFU3518 is an N-channel MOSFET designed for use in power management applications.

  • Maximum Power Dissipation: 110W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 80V
  • Maximum Continuous Drain Current: 38A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 29 mOhm @ 18A, 10V
  • Package: IPAK (TO-251)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.1504 $66.9024
13+ $9.1499 $118.9487
20+ $8.8635 $177.2700
27+ $8.5782 $231.6114
35+ $8.2917 $290.2095
47+ $7.4336 $349.3792
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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