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Same model may have multiple batches, images only for reference.
IRFU540ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFU540ZPBF

Part No IRFU540ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A IPAK
Datasheet
IRFU540ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 28.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047222-IRFU540ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU540ZPBF CAD Model

Description

The Infineon Technologies 439019 MOSFET is a N-channel device that has a drain-source breakdown voltage of 100V and a continuous drain current of 35A at 25°C.

  • Maximum Rds On: 28.5 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate Charge: 59nC @ 10V
  • Maximum Input Capacitance: 1690pF @ 25V
  • Package: IPAK (TO-251) case
  • Mounting: Through hole technology
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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