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Same model may have multiple batches, images only for reference.
IRFZ34EPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ34EPBF

Part No IRFZ34EPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 28A TO-220AB
Datasheet
IRFZ34EPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047238-IRFZ34EPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRFZ34EPBF CAD Model

Description

The Infineon Technologies IRFZ34EPBF is an N-Channel MOSFET transistor that comes in a TO-220AB package.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel MOSFET
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 28A @ 25°C
  • Maximum Power Dissipation: 68W
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Rds On: 42 mOhm @ 17A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
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Availability: 2,260 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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