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Same model may have multiple batches, images only for reference.
IRFZ44ESTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44ESTRRPBF

Part No IRFZ44ESTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 48A D2PAK
Datasheet
IRFZ44ESTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069622-IRFZ44ESTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ44ESTRRPBF CAD Model

Description

The IRFZ44ESTRRPBF is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 48A (Tc)
  • Max Gate Charge: 60nC @ 10V
  • Max Input Capacitance: 1360pF @ 25V
  • Maximum Rds On @ Id,Vgs: 23 mOhm @ 29A, 10V
  • Supply and demand status: limited
  • Status: not for new designs

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