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Same model may have multiple batches, images only for reference.
IRFZ44NL Real Image
Same model may have multiple batches, images only for reference.

IRFZ44NL

Part No IRFZ44NL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) | MOSFET N-CH 55V 49A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 49A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 17.5mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 63nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1470pF at 25V
Power Dissipation (Maximum) 3.8W, 94W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188187-IRFZ44NL
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ44NL CAD Model

Description

The Infineon Technologies 1188187-IRFZ44NL is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and continuous drain current of 49A.

  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1470pF @ 25V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Power Dissipation: 3.8W and 94W
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Status: Obsolete
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)

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