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Same model may have multiple batches, images only for reference.
IRFZ46ZSPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFZ46ZSPBF

Part No IRFZ46ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A D2PAK
Datasheet
IRFZ46ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 13.6 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040767-IRFZ46ZSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ46ZSPBF CAD Model

Description

The Infineon Technologies IRFZ46ZSPBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 51A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 51A @ 25°C
  • Power Dissipation (max): 82W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 13.6 mOhm @ 31A, 10V
  • Packaging: D2PAK

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