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Same model may have multiple batches, images only for reference.
IRG4PF50WDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4PF50WDPBF

Part No IRG4PF50WDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 900V 51A 200W TO247AC
Datasheet
IRG4PF50WDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 900V
Maximum Current Collector 51A
Pulsed Collector Current 204A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 28A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 2.63mJ (on), 1.34mJ (off)
Input Type Standard
Gate Charge 160nC
Turn-on and Turn-off delay time 71ns/150ns
Testing Conditions 720V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 016637-IRG4PF50WDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRG4PF50WD
Introduction Date May 04, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRG4PF50WDPBF CAD Model

Description

The Infineon Technologies IGBT transistor, part number IRG4PF50WDPBF, is a through-hole mounting transistor with a maximum current collector of 51A and a maximum power dissipation of 200W.

  • Reverse Recovery Time (trr): 90ns
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 28A
  • Popularity: High
  • Supply and Demand Status: Balance

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