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Same model may have multiple batches, images only for reference.
IRG7PH42UD1MPBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH42UD1MPBF

Part No IRG7PH42UD1MPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 85A 313W TO247AD  /  IGBT Trench 1200 V 85 A 313 W Through Hole TO-247AD
Datasheet
IRG7PH42UD1MPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 85 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 313 W
Switching Energy 1.21mJ (off)
Input Type Standard
Gate Charge 270 nC
Td (on/off) @ 25°C -/270ns
Test Condition 600V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IRG7PH
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IRG7PH42UD1MPBF-IT,IFEINFIRG7PH42UD1MPBF,SP001544976
Standard Package 25
Win Source Part Number 1065605-IRG7PH42UD1MPBF
Ultra Librarian 3D Model Ultra Librarian IRG7PH42UD1MPBF CAD Model

Description

The Infineon Technologies 1065605-IRG7PH42UD1MPBF is an IGBT (Insulated Gate Bipolar Transistor) transistor that has a maximum power of 313 W and a trench IGBT type.

  • Power: 313 W
  • Type: trench IGBT
  • Voltage Collector Emitter Breakdown: 1200 V
  • Current Collector (Ic) (Max): 85 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Package: TO-247-3
  • Gate Charge: 270 nC

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