The IRGP30B60KDEPBF is a 600V insulated gate bipolar transistor (IGBT) from Infineon Technologies, designed for high-voltage, high-current switching applications. It's part of the GenX4 series, known for its optimized performance in resonant switching topologies and hard-switching applications. The IGBT combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage drop.

Applications

• Induction Heating
• Welding Machines
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC)
• Motor Drives

Features

• 600V Blocking Voltage
• Low VCE(on) (Voltage Collector-Emitter On)
• Short-Circuit Rated
• Ultrafast Soft Recovery Diode
• Optimized for Resonant Switching
• TO-247 Package

Benefits

• High Efficiency: Low VCE(on) minimizes conduction losses, leading to higher efficiency.
• Robust Performance: Short-circuit rating ensures reliable operation under fault conditions.
• Fast Switching: Ultrafast soft recovery diode reduces switching losses and EMI.
• Simplified Design: Optimized for resonant switching topologies, simplifying design and improving performance.
• Easy Mounting: TO-247 package allows for easy mounting and efficient heat dissipation.

Technical Specifications

The IRGP30B60KDEPBF has a collector-emitter voltage (VCE) of 600V and a collector current (IC) of 24A at 100°C. The gate-emitter voltage (VGE) is ±20V. The short-circuit withstand time is 5µs. The device includes an ultrafast soft recovery diode for improved switching performance. It is available in a TO-247 package.