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Same model may have multiple batches, images only for reference.
IRGP35B60PDPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP35B60PDPBF

Part No IRGP35B60PDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube / IGBT 600V 60A 308W TO247AC
Datasheet
IRGP35B60PDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.55V @ 15V, 35A
Maximum Power Dissipation 308W
Total Switching Energy(Ets) 220μJ (on), 215μJ (off)
Input Type Standard
Gate Charge 160nC
Turn-on and Turn-off delay time 26ns/110ns
Testing Conditions 390V, 22A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 017741-IRGP35B60PDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRGP35B60PD
Introduction Date June 02, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRGP35B60PDPBF CAD Model

Description

The Infineon Technologies 017741-IRGP35B60PDPBF is a through hole-mounted NPT IGBT transistor with a reverse recovery time of 42ns. This transistor is designed for standard input types and has a gate charge of 160nC.

  • Maximum Collector Current: 60A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Total Switching Energy (on): 220μJ
  • Total Switching Energy (off): 215μJ
  • Turn-on Delay Time: 26ns
  • Turn-off Delay Time: 110ns
  • Package: TO-247AC
  • Maximum Power Dissipation: 308W
  • Status: active
  • Popularity: high

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5+ $33.0544 $165.2720
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11+ $27.7230 $304.9530
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