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Same model may have multiple batches, images only for reference.
IRGP4063D1PBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4063D1PBF

Part No IRGP4063D1PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 600V 100A 330W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 192A
Vce(on) (Maximum) at Vge, Ic 2.14V at 15V, 48A
Maximum Power 330W
Switching Energy 1.4mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) at 25°C 60ns/160ns
Test Condition 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr) 80ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Family Part Number IRGP4063D
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188364-IRGP4063D1PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4063D1PBF CAD Model

Description

The Infineon Technologies IRGP4063D1PBF is a through-hole IGBT transistor with a reverse recovery time of 80ns.

  • Current Collector Pulsed: 192A
  • Maximum Collector Current: 100A
  • Switching Energy: 1.4mJ (on) and 1.1mJ (off)
  • Gate Charge: 150nC
  • Package: packaged in a TO-247AC package
  • Maximum Power: 330W
  • Breakdown Voltage: 600V
  • Operating Temperature Range: -40°C to 175°C
  • Status: This device is obsolete and has a limited supply and demand status.

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