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Same model may have multiple batches, images only for reference.
IRGP4263-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4263-EPBF

Part No IRGP4263-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor | IGBT 650V 90A 300W TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 90A
Current - Collector Pulsed (Icm) 192A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 48A
Maximum Power 300W
Switching Energy 1.7mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) at 25°C 70ns/140ns
Test Condition 400V, 48A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1188369-IRGP4263-EPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4263-EPBF CAD Model

Description

The IRGP4263-EPBF is an IGBT transistor manufactured by Infineon Technologies.

  • Mounting Style: Through-Hole
  • Collector Current (Maximum): 90A
  • Collector-Emitter Breakdown Voltage (Maximum): 650V
  • Supply and Demand Status: Limited
  • Package: TO-247-3
  • Power (Maximum): 300W
  • Vce(on) (Maximum): 2.1V @ 15V, 48A
  • Td (on/off) @ 25°C: 70ns/140ns

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