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Same model may have multiple batches, images only for reference.
IRGP4740D-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4740D-EPBF

Part No IRGP4740D-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT W/ULTRAFAST SOFT RECOVERY D / IGBT 650 V 60 A 250 W Through Hole TO-247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 72 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 24A
Power - Max 250 W
Switching Energy 520µJ (on), 240µJ (off)
Input Type Standard
Gate Charge 70 nC
Td (on/off) @ 25°C 24ns/73ns
Test Condition 400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr) 170 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Standard Package 108 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 921529-IRGP4740D-EPBF
Ultra Librarian 3D Model Ultra Librarian IRGP4740D-EPBF CAD Model

Description

The IRGP4740D-EPBF is a single IGBT transistor designed for use in discrete semiconductor products.

  • Maximum Power Rating: 250 W
  • Collector-Emitter Breakdown Voltage: 650 V
  • Current Rating: 60 A
  • Pulsed Current Rating: 72 A
  • On-State Voltage Drop: 2V @ 15V and 24A
  • Reverse Recovery Time: 170 ns
  • Gate Charge: 70 nC
  • Switching Energy (on): 520µJ
  • Switching Energy (off): 240µJ
  • Input Type: Standard
  • Operating Temperature Range: -40°C to 175°C
  • Mounting: Through hole
  • Package: TO-247-3
  • Manufacturer: Infineon Technologies
  • Product Status: Active

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