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Same model may have multiple batches, images only for reference.
IRGS10B60KDTRRP Real Image
Same model may have multiple batches, images only for reference.

IRGS10B60KDTRRP

Part No IRGS10B60KDTRRP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 22A 156W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 10A
Maximum Power 156W
Switching Energy 140μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 38nC
Td (on/off) at 25°C 30ns/230ns
Test Condition 400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number IRGS10B60KDPBF
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 758302-IRGS10B60KDTRRP
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGS10B60KDTRRP CAD Model

Description

The Infineon Technologies IRGS10B60KDTRRP is an NPT IGBT transistor that is used in discrete semiconductor products.

  • Power: 156W
  • Vce(on) (Maximum) @ Vge, Ic: 2.2V @ 15V, 10A
  • Reverse Recovery Time (trr): 90ns
  • Current - Collector Pulsed (Icm): 44A
  • Switching Energy: 140μJ (on), 250μJ (off)
  • Gate Charge: 38nC
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD (SMT)
  • Current - Collector (Ic) (Maximum): 22A
  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Supply and Demand Status: Limited

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