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Same model may have multiple batches, images only for reference.
IRGSL15B60KDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGSL15B60KDPBF

Part No IRGSL15B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 31A 208W TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 31A
Current - Collector Pulsed (Icm) 62A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 15A
Maximum Power 208W
Switching Energy 220μJ (on), 340μJ (off)
Input Type Standard
Gate Charge 56nC
Td (on/off) at 25°C 34ns/184ns
Test Condition 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 92ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188415-IRGSL15B60KDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGSL15B60KDPBF CAD Model

Description

The Infineon Technologies 1188415-IRGSL15B60KDPBF is a Discrete Semiconductor Product that has an obsolete status.

  • Device Type: NPT IGBT
  • Maximum Collector Current: 31A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supply and Demand Status: Limited
  • Product Status: Obsolete
  • Maximum Power: 208W
  • Vce(on): 2.2V @ 15V, 15A

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