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Same model may have multiple batches, images only for reference.
IRL1004LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL1004LPBF

Part No IRL1004LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 130A TO-262
Datasheet
IRL1004LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 5330pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047413-IRL1004LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1004LPBF CAD Model

Description

The Infineon IRL1004LPBF is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 130A (Tc) @ 25°C.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 130A (Tc) @ 25°C
  • Package: TO-262
  • Power Dissipation: 3.8W (Ta), 200W (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 100nC @ 4.5V
  • Rds On: 6.5 mOhm @ 78A, 10V
  • Mounting: Through Hole
  • Suitable for: Power Supplies and Motor Control Circuits

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