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IRL1004S

Part No IRL1004S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 130A D2PAK
Datasheet
Sample
Rohs State Need to verify
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 5330pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047414-IRL1004S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRL1004S CAD Model

Description

The Infineon Technologies IRL1004S MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 40V.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 130A @ 25°C (Tc)
  • Maximum Power Dissipation: 3.8W (Ta) or 200W (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 100nC @ 4.5V
  • Package: D2PAK
  • Operating Temperature: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6900 $117.3000
260+ $0.6684 $173.7840
360+ $0.6468 $232.8480
465+ $0.6253 $290.7645
620+ $0.5606 $347.5720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,899 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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