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Same model may have multiple batches, images only for reference.
IRL1104STRL Real Image
Same model may have multiple batches, images only for reference.

IRL1104STRL

Part No IRL1104STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 104A D2PAK
Datasheet
IRL1104STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 68nC @ 4.5V
Max Input Capacitance 3445pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.4W (Ta), 167W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047423-IRL1104STRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1104STRL CAD Model

Description

The Infineon Technologies MOSFET is a polarity N-channel component designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 40V
  • Continuous Drain Current: 104A @ 25°C
  • Package: D2PAK
  • Power Dissipation: 2.4W @ Ta and 167W @ Tc
  • Operating Temperature: -55°C to 175°C (TJ)
  • Lifecycle Status: Obsolete (EOL)
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)
  • Channel Type: N
  • Gate Charge: 68nC (maximum) @ Vgs of 4.5V
  • Input Capacitance: 3445pF (maximum) @ Vds of 25V

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