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Same model may have multiple batches, images only for reference.
SI1050X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1050X-T1-GE3

Part No SI1050X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 1.34A SC-89-6
Datasheet
SI1050X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 11.6nC @ 5V
Max Input Capacitance 585pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 86 mOhm @ 1.34A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 064374-SI1050X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1050X-T1-GE3 CAD Model

Description

The Vishay SI1050X-T1-GE3 is a high-quality electronic component that is manufactured by Vishay.

  • Manufacturer: Vishay
  • Product Name: SI1050X-T1-GE3
  • Type: N-Channel MOSFET
  • Maximum Power Dissipation: 236mW (Ta)
  • Packaging: Reel - TR
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: Balanced
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3704 $50.0040
330+ $0.3039 $100.2870
510+ $0.2944 $150.1440
705+ $0.2849 $200.8545
910+ $0.2754 $250.6140
1,215+ $0.2470 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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