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Same model may have multiple batches, images only for reference.
IRL1404LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL1404LPBF

Part No IRL1404LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A TO-262
Datasheet
IRL1404LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 140nC @ 5V
Max Input Capacitance 6600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047426-IRL1404LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL1404LPBF CAD Model

Description

The Infineon Technologies 1047426-IRL1404LPBF is an N-channel MOSFET technology-based electronic component with a drain-source breakdown voltage of 40V and a continuous drain current of 160A (Tc).

  • Manufacturer: Infineon Technologies
  • Technology: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 160A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 140nC @ 5V
  • Mounting Type: Through-hole
  • Package: TO-262
  • Power Dissipation: 3.8W (Ta), 200W (Tc)
  • Maximum Rds On @ Id, Vgs: 4 mOhm @ 95A, 10V
  • Application: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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