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Same model may have multiple batches, images only for reference.
IRL2703STRL Real Image
Same model may have multiple batches, images only for reference.

IRL2703STRL

Part No IRL2703STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A D2PAK
Datasheet
IRL2703STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047435-IRL2703STRL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRL2703STRL CAD Model

Description

The Infineon Technologies 1047435-IRL2703STRL MOSFET is a high-performance N-channel device designed for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 45W
  • Drain-Source Breakdown Voltage: 30V
  • Ideal for: Use in discrete semiconductor products
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Input Capacitance: 450pF @ 25V
  • Maximum Rds On: 40 mOhm @ 14A, 10V
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
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Availability: 750 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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