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Same model may have multiple batches, images only for reference.
IRL3102 Real Image
Same model may have multiple batches, images only for reference.

IRL3102

Part No IRL3102
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 61A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Rds On (Max) @ Id, Vgs 13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 15 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605777-IRL3102
Ultra Librarian 3D Model Ultra Librarian IRL3102 CAD Model

Description

The IRL3102 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Category: Discrete semiconductor products, transistors and FETs
  • Vdss (Drain to Source Voltage): 20V
  • Id (Continuous Drain Current): 61A @ 25°C
  • Rds On (Max): 13mOhm @ 37A and 7V
  • Power Dissipation: up to 89W
  • Package: TO-220-3
  • Mounting: Through-hole
  • Qg (Gate Charge): 58nC @ 4.5V
  • Ciss (Input Capacitance): 2500pF @ 15V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7467 $59.9472
38+ $3.0743 $116.8234
59+ $2.9782 $175.7138
81+ $2.8822 $233.4582
104+ $2.7861 $289.7544
139+ $2.4978 $347.1942
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Availability: 32,500 pieces
MOQ: 16 pcs
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