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Same model may have multiple batches, images only for reference.
IRL3103D1PBF Real Image
Same model may have multiple batches, images only for reference.

IRL3103D1PBF

Part No IRL3103D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 64A TO-220AB
Datasheet
IRL3103D1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 43nC @ 4.5V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047442-IRL3103D1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3103D1PBF CAD Model

Description

The Infineon Technologies IRL3103D1PBF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 64A @ 25°C
  • Maximum Rds On: 14 mOhm @ 34A and 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 43nC @ 4.5V
  • Package: TO-220AB
  • Mounting Technology: Through Hole
  • Power Dissipation: 2W (Ta) and 89W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)

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