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Same model may have multiple batches, images only for reference.
IRL3103STRR Real Image
Same model may have multiple batches, images only for reference.

IRL3103STRR

Part No IRL3103STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 64A D2PAK
Datasheet
IRL3103STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 1650pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 125135-IRL3103STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3103STRR CAD Model

Description

The Infineon Technologies MOSFET IRL3103STRR is a surface-mount device that is now obsolete (EOL).

  • N-channel MOSFET: Yes
  • Power Supplies: Yes
  • Motor Control: Yes
  • General Purpose Inverters: Yes
  • Power Dissipation: 94W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 64A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Case/Package: D2PAK
  • Maximum Rds On: 12 mOhm @ 34A, 10V

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