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IRL3303STRLPBF

Part No IRL3303STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A D2PAK  /  N-Channel 30 V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 800
Win Source Part Number 1174888-IRL3303STRLPBF
Ultra Librarian 3D Model Ultra Librarian IRL3303STRLPBF CAD Model

Description

The IRL3303STRLPBF is a MOSFET (Metal Oxide) transistor from Infineon Technologies.

  • Series: HEXFET
  • Package: Tape and reel
  • Channel Type: N-Channel
  • Vdss: 30 V
  • Id: 38A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
  • Qg (Max) @ Vgs: 26 nC @ 4.5 V
  • Ciss (Max) @ Vds: 870 pF @ 25 V
  • Power Dissipation: 3.8W (Ta), 68W (Tc)
  • Package: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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