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Same model may have multiple batches, images only for reference.
IRL3303STRR Real Image
Same model may have multiple batches, images only for reference.

IRL3303STRR

Part No IRL3303STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A D2PAK
Datasheet
IRL3303STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 870pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047457-IRL3303STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3303STRR CAD Model

Description

The Infineon Technologies IRL3303STRR is a N-Channel MOSFET that features a drain-source breakdown voltage of 30V and a continuous drain current of 38A @ 25°C.

  • Power Dissipation: 3.8W (Ta) and 68W (Tc)
  • Maximum Rds On: 26 mOhm @ 20A and 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 870pF @ 25V
  • Case/Package: D2PAK

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