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Same model may have multiple batches, images only for reference.
IRL3705NSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3705NSTRLPBF

Part No IRL3705NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 89A D2PAK
Datasheet
IRL3705NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 98nC @ 5V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 141903-IRL3705NSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3705NSTRLPBF CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel device with a drain-source breakdown voltage of 55V.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 89A @ 25°C
  • Maximum Power Dissipation: 3.8W (Ta), 170W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 98nC @ 5V
  • Maximum Rds On: 10 mOhm @ 46A, 10V
  • Case: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Application: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
50+ $1.0246 $51.2300
120+ $0.8407 $100.8840
185+ $0.8145 $150.6825
255+ $0.7882 $200.9910
330+ $0.7619 $251.4270
440+ $0.6831 $300.5640
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