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IRL3705NSTRR

Part No IRL3705NSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 89A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 98nC @ 5V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047466-IRL3705NSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3705NSTRR CAD Model

Description

The Infineon Technologies IRL3705NSTRR is a MOSFET transistor with an N-Channel polarity and a maximum power dissipation of 3.8W (Ta), 170W (Tc). Infineon Technologies IRL3705NSTRR

  • Polarity: N-Channel
  • Power Dissipation: 3.8W (Ta), 170W (Tc)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 4V, 10V
  • Mounting Type: SMD (SMT)
  • Maximum Rds On @ Id,Vgs: 10 mOhm @ 46A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 98nC @ 5V
  • Maximum Input Capacitance: 3600pF @ 25V
  • Maximum Gate-Source Voltage: ±16V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 89A (Tc)
  • Case: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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