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IRL3713STRLPBF

Part No IRL3713STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 260A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 110nC @ 4.5V
Max Input Capacitance 5890pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017746-IRL3713STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRL3713
Introduction Date May 19, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRL3713STRLPBF CAD Model

Description

The Infineon Technologies IRL3713STRLPBF is a N-Channel MOSFET transistor that is commonly used in power management applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 260A @ 25°C
  • Maximum Power Dissipation: 330W
  • Maximum Rds On: 3 mOhm @ 38A, 10V
  • Package: D2PAK case
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 110nC @ 4.5V
  • Halogen-Free Compliant: Yes
  • Market Popularity: High

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Pricing & Ordering

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23+ $2.5199 $57.9577
56+ $2.0677 $115.7912
87+ $2.0030 $174.2610
120+ $1.9385 $232.6200
155+ $1.8738 $290.4390
207+ $1.6800 $347.7600
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Availability: 1,466 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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