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IRL3715S

Part No IRL3715S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 54A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1060pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 71W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 113831-IRL3715S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3715S CAD Model

Description

The Infineon Technologies IRL3715S is a high-quality N-channel MOSFET that is used in various applications.

  • Maximum Power Dissipation: 3.8W (Ta), 71W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Win Source Part Number: 113831

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7223 $50.5610
170+ $0.5926 $100.7420
265+ $0.5741 $152.1365
360+ $0.5556 $200.0160
470+ $0.5371 $252.4370
625+ $0.4815 $300.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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