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Same model may have multiple batches, images only for reference.
IRL3803LPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3803LPBF

Part No IRL3803LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 140A TO-262
Datasheet
IRL3803LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 140nC @ 4.5V
Max Input Capacitance 5000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 71A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069703-IRL3803LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3803LPBF CAD Model

Description

The Infineon Technologies 069703-IRL3803LPBF is an N-channel MOSFET that has a maximum drain-source breakdown voltage of 30V and a continuous drain current of 140A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 140A @ 25°C
  • Case/Package: TO-262
  • Power Dissipation: 3.8W (Ta) and 200W (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 140nC @ 4.5V
  • Max Input Capacitance: 5000pF @ 25V
  • Maximum Rds On: 6 mOhm @ 71A, 10V
  • Category: Discrete Semiconductor Products

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