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Same model may have multiple batches, images only for reference.
IRL540NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRL540NSTRRPBF

Part No IRL540NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 36A D2PAK
Datasheet
IRL540NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 74nC @ 5V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 18A, 10V
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205468-IRL540NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL540NSTRRPBF CAD Model

Description

The Infineon Technologies IRL540NSTRRPBF is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 36A (Tc)
  • Maximum Rds On at Id,Vgs: 44 mOhm @ 18A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 74nC @ 5V
  • Package: D2PAK
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 3.8W (Ta), 140W (Tc)
  • Application: Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
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Availability: 41,160 pieces
MOQ: 45 pcs
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