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Same model may have multiple batches, images only for reference.
IRL5602SPBF Real Image
Same model may have multiple batches, images only for reference.

IRL5602SPBF

Part No IRL5602SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 24A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 1460pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 12A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205469-IRL5602SPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL5602SPBF CAD Model

Description

The Infineon Technologies 205469-IRL5602SPBF is a P-channel MOSFET that has a maximum drain-source breakdown voltage of 20V and a continuous drain current of 24A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 24A @ 25°C
  • Case/Package: D2PAK
  • Power Dissipation: 75W (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 44nC @ 4.5V
  • Max Input Capacitance: 1460pF @ 15V
  • Maximum Rds On: 42 mOhm @ 12A, 4.5V
  • Category: Discrete Semiconductor Products
  • Package Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 30,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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