The Infineon Technologies MOSFET is a N-channel polarity electronic component with a maximum power dissipation of 75W (Tc).

• Maximum Power Dissipation: 75W (Tc)
• Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 78A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 2.35V @ 50μA
• Maximum Gate Charge: 23nC @ 4.5V
• Maximum Input Capacitance: 2139pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id,Vgs: 4.8 mOhm @ 40A, 10V
• Mounting: through hole
• Package: TO-220AB