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Same model may have multiple batches, images only for reference.
IRLBA1304PPBF Real Image
Same model may have multiple batches, images only for reference.

IRLBA1304PPBF

Part No IRLBA1304PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 185A SUPER-220  /  N-Channel 40 V 185A (Tc) 300W (Tc) Through Hole SUPER-220™ (TO-273AA)
Datasheet
IRLBA1304PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7660 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-220™ (TO-273AA)
Package / Case TO-273AA
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRLBA1304PPBF
Standard Package 50
Win Source Part Number 1015931-IRLBA1304PPBF
Ultra Librarian 3D Model Ultra Librarian IRLBA1304PPBF CAD Model

Description

The Infineon Technologies IRLBA1304PPBF is a N-Channel MOSFET transistor with drain to source voltage of 40 V and continuous drain current of 185A (Tc) @ 25°C.

  • On-Resistance @ 110A, 10V: 4mOhm @ 110A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Package: Through hole TO-273AA package
  • Gate Charge @ 4.5 V: 140 nC @ 4.5 V
  • Maximum Power Dissipation (Tc): 300W (Tc)
  • Input Capacitance @ 25 V: 7660 pF @ 25 V
  • Series: HEXFET®
  • Status: Obsolete

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33+ $3.6070 $119.0310
50+ $3.4943 $174.7150
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89+ $3.2689 $290.9321
119+ $2.9307 $348.7533
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