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IRLH5030TRPBF

Part No IRLH5030TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A 8PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 150μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 5185pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 069712-IRLH5030TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLH5030TRPBF CAD Model

Description

The Infineon Technologies 069712-IRLH5030TRPBF is a high-performance N-channel MOSFET that can be used in a variety of applications.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 13A (Ta), 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 150μA
  • Maximum Rds On at Id,Vgs: 9 mOhm @ 50A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 5185pF @ 50V
  • Maximum Gate Charge: 94nC @ 10V
  • Package: PQFN (5x6) case
  • Power Dissipation: 3.6W (Ta), 156W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5785 $51.5700
48+ $2.1157 $101.5536
74+ $2.0496 $151.6704
101+ $1.9835 $200.3335
131+ $1.9174 $251.1794
175+ $1.7190 $300.8250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,921 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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