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IRLH6224TRPBF

Part No IRLH6224TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 28A PQFN 5X6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 28A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 3710pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.6W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1047536-IRLH6224TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLH6224TRPBF CAD Model

Description

The Infineon Technologies 433112 is a MOSFET semiconductor product in the N-channel polarity designed for use in discrete semiconductor applications.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel MOSFET
  • Maximum Power Dissipation: 3.6W (Ta) and 52W (Tc)
  • Continuous Drain Current: 28A (Ta) and 105A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1.1V @ 50μA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Input Capacitance: 3710pF @ 10V
  • Maximum Rds On: 3 mOhm @ 20A and 4.5V
  • Package: 8-PQFN (5x6)
  • Dimension: 8-PowerTDFN
  • Drive Voltage: 2.5V and 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8796 $61.5720
165+ $0.7218 $119.0970
250+ $0.6992 $174.8000
345+ $0.6766 $233.4270
445+ $0.6541 $291.0745
595+ $0.5864 $348.9080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,700 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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