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Same model may have multiple batches, images only for reference.
IRLHM620TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRLHM620TRPBF

Part No IRLHM620TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 26A PQFN
Datasheet
IRLHM620TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.1V @ 50μA
Max Gate Charge 78nC @ 4.5V
Max Input Capacitance 3620pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 20A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (3x3)
Dimension 8-PowerTDFN
Win Source Part Number 108386-IRLHM620TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRLHM620
Introduction Date November 04, 2010
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRLHM620TRPBF CAD Model

Description

The Infineon Technologies IRLHM620TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 26A (Ta), 40A (Tc).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 26A (Ta), 40A (Tc)
  • Gate-Source Threshold Voltage: 1.1V @ 50μA
  • Maximum Gate Charge: 78nC @ 4.5V
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 2.7W (Ta), 37W (Tc)
  • Package: PQFN (3x3)
  • Dimension: 8-PowerTDFN
  • Applications: Power management, battery charging, and motor control

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385+ $0.2618 $100.7930
595+ $0.2536 $150.8920
815+ $0.2454 $200.0010
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1,415+ $0.2127 $300.9705
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