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Same model may have multiple batches, images only for reference.
IRLHS6276TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRLHS6276TR2PBF

Part No IRLHS6276TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.5A PQFN
Datasheet
IRLHS6276TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 45 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 10μA
Max Gate Charge 3.1nC @ 4.5V
Max Input Capacitance 310pF @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Win Source Part Number 1047545-IRLHS6276TR2PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLHS6276TR2PBF CAD Model

Description

The Infineon Technologies IRLHS6276TR2PBF is a 2 N-channel (dual) FET with a logic level gate feature.

  • Channel Type: 2 N-channel (dual)
  • Feature: Logic level gate
  • Mounting: Surface-mounting
  • Package: 6-PQFN (2x2)
  • Maximum Power Dissipation: 1.5W
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 3.4A, 4.5V
  • Application: Discrete semiconductor products
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4046 $58.6670
350+ $0.3321 $116.2350
540+ $0.3217 $173.7180
745+ $0.3113 $231.9185
960+ $0.3009 $288.8640
1,285+ $0.2698 $346.6930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,100 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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